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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AM79C960KC датащи(PDF) 89 Page - Advanced Micro Devices |
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AM79C960KC датащи(HTML) 89 Page - Advanced Micro Devices |
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89 / 127 page  P R E L I M I N A R Y AMD 1-431 Am79C960 DC CHARACTERISTICS over COMMERCIAL operating ranges unless otherwise specified (continued) Parameter Symbol Parameter Description Test Conditions Min Max Unit Attachment Unit Interface (Continued) IAODOFF Transmit Differential Output Idle Current RL = 78 Ω (Note 4) –1 +1 mA VCMT Transmit Output Common Mode Voltage RL = 78 Ω 2.5 AVDD V VODI DO ± Transmit Differential Output Voltage Imbalance RL = 78 Ω (Note 5) 25 mV VATH Receive Data Differential Input Threshold (Note 5) –35 35 mV VASQ DI ± and CI± Differential Input Threshold (Squelch) –275 –160 mV VIRDVD DI ± and CI± Differential Mode Input Voltage Range –1.5 +1.5 V VICM DI ± and CI± Input Bias Voltage IIN = 0 mA AVDD–3.0 AVDD–1.0 V VOPD DO ± Undershoot Voltage at Zero Differential on Transmit Return to Zero (ETD) (Note 5) –100 mV Twisted Pair Interface IIRXD Input Current at RXD ± AVSS < VIN < AVDD –500 500 µA RRXD RXD ± Differential Input Resistance (Note 5) 10 K Ω VTIVB RXD+, RXD– Open Circuit Input Voltage (Bias) IIN = 0 mA AVDD – 3.0 AVDD – 1.5 V VTIDV Differential Mode Input Voltage Range (RXD ±)AVDD = +5 V –3.1 +3.1 V VTSQ+ RXD Positive Squelch Sinusoid Threshold (Peak) 5 MHz ≤ f ≤10 MHz 300 520 mV VTSQ– RXD Negative Squelch Sinusoid Threshold (Peak) 5 MHz ≤ f ≤10 MHz –520 –300 mV VTHS+ RXD Post-Squelch Sinusoid Positive Threshold (Peak) 5 MHz ≤ f ≤10 MHz 150 293 mV VTHS– RXD Post-Squelch Sinusoid Negative Threshold (Peak) 5 MHz ≤ f ≤10 MHz –293 –150 mV VLTSQ+ RXD Positive Squelch Threshold (Peak) LRT = 1 (Note 6) 180 312 mV VLTSQ– RXD Negative Squelch Threshold (Peak) LRT = 1 (Note 6) –312 –180 mV VLTHS+ RXD Post-Squelch Positive Threshold (Peak) LRT = 1 (Note 6) 90 156 mV VLTHS– RXD Post-Squelch Negative Threshold (Peak) LRT = 1 (Note 6) –156 –90 mV |
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