 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
LP2998MA датащи(PDF) 4 Page - Texas Instruments |
|
|
|||||||||||||||||||||||||||||
LP2998MA датащи(HTML) 4 Page - Texas Instruments |
|
|
4 / 26 page  LP2998 SNVS521I – DECEMBER 2007 – REVISED APRIL 2013 www.ti.com Electrical Characteristics (continued) Specifications with standard typeface are for TJ = 25°C and limits in boldface type apply over the full Operating Temperature Range (TJ = -40°C to +125°C) (1). Unless otherwise specified, VIN = AVIN = PVIN = 2.5V. Parameter Test Conditions Min Typ Max Units IOUT = 0A VIN = VDDQ = 2.3V 1.120 1.159 1.190 V VIN = VDDQ = 2.5V 1.210 1.259 1.290 V VIN = VDDQ = 2.7V 1.320 1.359 1.390 V VTT Output Voltage (DDR I) (2) IOUT = +/- 1.5A VIN = VDDQ = 2.3V 1.125 1.159 1.190 V VIN = VDDQ = 2.5V 1.225 1.259 1.290 V VIN = VDDQ = 2.7V 1.325 1.359 1.390 V IOUT = 0A, AVIN = 2.5V PVIN = VDDQ = 1.7V 0.822 0.856 0.887 V PVIN = VDDQ = 1.8V 0.874 0.908 0.939 V PVIN = VDDQ = 1.9V 0.923 0.957 0.988 V VTT Output Voltage (DDR II) (2) IOUT = +/- 0.5A, AVIN = 2.5V PVIN = VDDQ = 1.7V 0.820 0.856 0.890 V PVIN = VDDQ = 1.8V 0.870 0.908 0.940 V VTT PVIN = VDDQ = 1.9V 0.920 0.957 0.990 V IOUT = 0A, AVIN = 2.5V PVIN = VDDQ = 1.35V 0.656 0.677 0.698 V PVIN = VDDQ = 1.5V 0.731 0.752 0.773 V PVIN = VDDQ = 1.6V 0.781 0.802 0.823 V IOUT = +0.2A, AVIN = 2.5V 0.667 0.688 0.710 V PVIN = VDDQ = 1.35V IOUT = -0.2A, AVIN = 2.5V 0.641 0.673 0.694 V PVIN = VDDQ = 1.35V VTT Output Voltage (DDR III) (2) IOUT = +0.4A, AVIN = 2.5V 0.740 0.763 0.786 V PVIN = VDDQ = 1.5V IOUT = -0.4A, AVIN = 2.5V 0.731 0.752 0.773 V PVIN = VDDQ = 1.5V IOUT = +0.5A, AVIN = 2.5V 0.790 0.813 0.836 V PVIN = VDDQ = 1.6V IOUT = -0.5A, AVIN = 2.5V 0.781 0.802 0.823 V PVIN = VDDQ = 1.6V VTT Output Voltage Offset (VREF – VTT) for DDR I (3) IOUT = 0A -30 0 30 mV IOUT = -1.5A -30 0 30 mV IOUT = +1.5A -30 0 30 mV VTT Output Voltage Offset (VREF – VTT) for DDR II (3) IOUT = 0A -30 0 30 mV IOUT = -0.5A -30 0 30 mV VOSVtt IOUT = +0.5A -30 0 30 mV VTT Output Voltage Offset (VREF – VTT) for DDR III (3) IOUT = 0A -30 0 30 mV IOUT = ±0.2A -30 0 30 mV IOUT = ±0.4A -30 0 30 mV IOUT = ±0.5A -30 0 30 mV IQ Quiescent Current (4) IOUT = 0A 320 500 µA ZVDDQ VDDQ Input Impedance 100 k Ω ISD Quiescent current in shutdown (4) SD = 0V 115 150 µA (2) VTT load regulation is tested by using a 10 ms current pulse and measuring VTT. (3) VTT load regulation is tested by using a 10 ms current pulse and measuring VTT. (4) Quiescent current is defined as the current flow into AVIN. 4 Submit Documentation Feedback Copyright © 2007–2013, Texas Instruments Incorporated Product Folder Links: LP2998 |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
