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2SC5508 датащи(PDF) 3 Page - Renesas Technology Corp

номер детали 2SC5508
подробное описание детали  NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
PDF  10 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5508 датащи(HTML) 3 Page - Renesas Technology Corp

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2SC5508
Chapter Title
R09DS0055EJ0200 Rev.2.00
Page 3 of 8
Mar 5, 2013
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Thermal/DC Characteristics
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
250
200
150
100
50
0
Ambient Temperature TA (˚C), Case Temperature TC (˚C)
Base to Emitter Voltage VBE (V)
0
25
50
75
100
125
150
Ptot-TA: Free air
Ptot-TA: Mounted on ceramic board
(15 mm
× 15 mm, t = 0.6 mm)
Ptot-TC: When case temperature
is specified
50
40
30
20
10
0
0.2
0.4
0.6
0.8
1.0
1.2
VCE = 2 V
50
40
30
20
10
0
01
2
3
4
5
IB = 50 A
100 A
150 A
200 A
250 A
300 A
350 A
400 A
450 A
500 A
0.001
200
100
10
1
0.01
0.1
1
10
100
VCE = 2 V
μ
μ
μ
μ
μ
μ
μ
μ
μ
μ
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Capacitance/fT Characteristics
0.50
0.40
0.30
0.20
0.10
0
Collector to Base Voltage VCB (V)
0
1.0
2.0
3.0
4.0
5.0
f = 1 MHz
Collector Current IC (mA)
1
30
25
20
15
10
5
0
10
100
VCE = 3 V
f = 2 GHz
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Remark The graphs indicate nominal characteristics.



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