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2SC5508 датащи(PDF) 1 Page - Renesas Technology Corp

номер детали 2SC5508
подробное описание детали  NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
PDF  10 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5508 датащи(HTML) 1 Page - Renesas Technology Corp

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R09DS0055EJ0200 Rev.2.00
Page 1 of 8
Mar 5, 2013
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Preliminary Data Sheet
2SC5508
NPN SILICON RF TRANSISTOR
FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
• fT = 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
Order Number
Quantity
Package
Supplying Form
2SC5508
2SC5508-A
50 pcs (Non reel)
2SC5508-T2
2SC5508-T2-A
3 kpcs/reel
2SC5508-T2B
2SC5508-T2B-A
15 kpcs/reel
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
8 mm wide embossed taping
Pin 1 (Emitter), Pin 2 (Collector) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TC = 25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
3.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot
Note
115
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Free air.
THERMAL RESISTANCE
Parameter
Symbol
Ratings
Unit
Junction to Case Resistance
Rth j-c
150
°C /W
Junction to Ambient Resistance
Rth j-a
650
°C /W
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0055EJ0200
Rev.2.00
Mar 5, 2013
<R>


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