2SC5508 datasheet(2/10 Pages) RENESAS

номер детали	2SC5508

подробное описание детали	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

PDF	10 Pages

Scroll/Zoom	100%

производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

Logo

2 / 10 page

2SC5508

Chapter Title

R09DS0055EJ0200 Rev.2.00

Page 2 of 8

Mar 5, 2013

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0

–

200

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0

–

200

DC Current Gain

hFE

Note 1

VCE = 2 V, IC = 5 mA

100

–

RF Characteristics

Gain Bandwidth Product

VCE = 3 V, IC = 30 mA, f = 2 GHz

–

GHz

Insertion Power Gain

|S21e|

VCE = 2 V, IC = 20 mA, f = 2 GHz

–

Noise Figure

VCE = 2 V, IC = 5 mA, f = 2 GHz,

ZS = Zopt

–

1.1

1.5

Reverse Transfer Capacitance

Cre

Note 2

VCB = 2 V, IE = 0, f = 1 MHz

–

0.18

0.24

Maximum Available Power Gain

MAG

Note 3

VCE = 2 V, IC = 20 mA, f = 2 GHz

–

Maximum Stable Power Gain

MSG

Note 4

VCE = 2 V, IC = 20 mA, f = 2 GHz

–

Gain 1 dB Compression Output

Power

PO (1 dB)

VCE = 2 V, IC = 20 mA

Note 5, f = 2 GHz

–

dBm

3rd Order Intermodulation

Distortion Output Intercept Point

OIP3

VCE = 2 V, IC = 20 mA

Note 5, f = 2 GHz

–

dBm

Notes 1. Pulse measurement: PW

≤ 350

μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

3. MAG =

4. MSG =

5. Collector current when PO (1 dB) is output

hFE CLASSIFICATION

Rank

FB/YFB

Marking

T79

hFE Value

50 to 100

(K –

√ (K

2 – 1) )

S21

S12

S21

S12

2SC5508 датащи(PDF) 2 Page - Renesas Technology Corp

2SC5508 датащи(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10

датащи скачать

ссылки URL