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STM32F102XB датащи(PDF) 32 Page - STMicroelectronics |
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STM32F102XB датащи(HTML) 32 Page - STMicroelectronics |
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32 / 80 page ![]() Electrical characteristics STM32F102x8, STM32F102xB 32/80 DocID15056 Rev 5 5.3.3 Embedded reset and power control block characteristics The parameters given in Table 11 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 8. . 5.3.4 Embedded reference voltage The parameters given in Table 12 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 8. Table 10. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPVD Programmable voltage detector level selection PLS[2:0]=000 (rising edge) 2.1 2.18 2.26 V PLS[2:0]=000 (falling edge) 2 2.08 2.16 V PLS[2:0]=001 (rising edge) 2.19 2.28 2.37 V PLS[2:0]=001 (falling edge) 2.09 2.18 2.27 V PLS[2:0]=010 (rising edge) 2.28 2.38 2.48 V PLS[2:0]=010 (falling edge) 2.18 2.28 2.38 V PLS[2:0]=011 (rising edge) 2.38 2.48 2.58 V PLS[2:0]=011 (falling edge) 2.28 2.38 2.48 V PLS[2:0]=100 (rising edge) 2.47 2.58 2.69 V PLS[2:0]=100 (falling edge) 2.37 2.48 2.59 V PLS[2:0]=101 (rising edge) 2.57 2.68 2.79 V PLS[2:0]=101 (falling edge) 2.47 2.58 2.69 V PLS[2:0]=110 (rising edge) 2.66 2.78 2.9 V PLS[2:0]=110 (falling edge) 2.56 2.68 2.8 V PLS[2:0]=111 (rising edge) 2.76 2.88 3 V PLS[2:0]=111 (falling edge) 2.66 2.78 2.9 V VPVDhyst(2) PVD hysteresis 100 mV VPOR/PDR Power on/power down reset threshold Falling edge 1.8(1) 1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value. 1.88 1.96 V Rising edge 1.84 1.92 2.0 V VPDRhyst PDR hysteresis 40 mV tRSTTEMPO(2) 2. Guaranteed by design, not tested in production. Reset temporization 1.5 2.5 4.5 ms |
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