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STM32F101RBH6 датащи(PDF) 49 Page - STMicroelectronics

номер детали STM32F101RBH6
подробное описание детали  Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces
PDF  90 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32F101RBH6 датащи(HTML) 49 Page - STMicroelectronics

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STM32F101x8, STM32F101xB
Electrical characteristics
89
Figure 22. Typical application with a 32.768 kHz crystal
5.3.7
Internal clock source characteristics
The parameters given in Table 23 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
High-speed internal (HSI) RC oscillator
ai14129b
OSC32_OU T
OSC32_IN
fLSE
CL1
RF
STM32F10xxx
32.768 KH z
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
CL2
Table 23. HSI oscillator characteristics(1)
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
8
MHz
DuCy(HSI) Duty cycle
45
55
%
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from
the ST website www.st.com.
1(3)
3. Guaranteed by design, not tested in production.
%
Factory-
calibrated
(4) (5)
4. Based on characterization, not tested in production.
5. The actual frequency of HSI oscillator may be impacted by a reflow, but does not drift out of the specified
range.
TA = –40 to 105 °C
–2
2.5
%
TA = –10 to 85 °C
–1.5
2.2
%
TA = 0 to 70 °C
–1.3
2
%
TA = 25 °C
–1.1
1.8
%
tsu(HSI)(4)
HSI oscillator
startup time
12
µs
IDD(HSI)(4)
HSI oscillator power
consumption
80
100
µA



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