SO16N datasheet(15/51 Pages) STMICROELECTRONICS

15 / 51 page

L6566BH

Electrical characteristics

Doc ID 16610 Rev 2

15/51

Vpk

Peak voltage

(4)

1.5

Vvy

Valley voltage

0.5

IFMOD

Charge/discharge current

150

µA

Mode selection / slope compensation

MODEth

Threshold for QR operation

SCpk

Ramp peak

(MODE/SC = open)

RS-COMP = 3 kΩ to GND, GD

pin HIGH, VCOMP = 5 V

1.7

SCvy

Ramp starting value

(MODE/SC = open)

RS-COMP = 3 kΩ to GND,

GD pin HIGH

0.3

Ramp voltage

(MODE/SC = open)

GD pin LOW

Source capability

(MODE/SC = open)

VS-COMP = VS-COMPpk

0.8

Soft-start

ISS1

Charge current

TJ = 25 °C, VSS < 2 V,

VCOMP = 4 V

µA

ISS2

TJ = 25 °C, VSS > 2 V,

VCOMP = VCOMPHi

3.556.5

ISSdis

Discharge current

VSS > 2 V

3.556.5

µA

VSSclamp

High saturation voltage

VCOMP = 4 V

VSSDIS

Disable level

(1) V

COMP = VCOMPHi

4.8555.15

VSSLAT

Latch OFF level

VCOMP = VCOMPHi

6.4

Gate driver

VGDH

Output high voltage

IGDsource = 5 mA, Vcc = 12 V

9.8

VGDL

Output low voltage

IGDsink = 100 mA

0.75

Isourcepk

Output source peak current

-0.6

Isinkpk

Output sink peak current

0.8

Fall time

Rise time

VGDclamp

Output clamp voltage

IGDsource = 5 mA; Vcc = 20 V

11.3

UVLO saturation

Vcc = 0 to Vccon, Isink = 1 mA

0.9

1.1

Parameters tracking one another.

See

Table 6 on page 18 and Table 7 on page 44.

For the thermal behavior, refer to

Figure 8.

The voltage feedforward block output is given by:

Table 4.

Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

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