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STP11N52K3 датащи(PDF) 3 Page - STMicroelectronics

номер детали STP11N52K3
подробное описание детали  N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET
PDF  20 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STP11N52K3 датащи(HTML) 3 Page - STMicroelectronics

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STB11N52K3, STF11N52K3, STP11N52K3
Electrical ratings
Doc ID 018868 Rev 2
3/20
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, D²PAK
TO-220FP
VDS
Drain- source voltage
525
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
10
10 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
6
6 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
40
40 (1)
A
PTOT
Total dissipation at TC = 25 °C
125
30
W
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
5A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
170
mJ
VESD(G-S)
Gate source ESD(HBM-C = 100 pF,
R = 1.5 k
Ω)
2500
V
dv/dt(3)
3.
ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
12
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
TJ
Tstg
Operating junction temperature
Storage temperature
- 55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220
TO-220FP
D²PAK
Rthj-case Thermal resistance junction-case max
1
4.17
1
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.50
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
30
°C/W
TJ
Maximum lead temperature for soldering
purpose
300
°C/W



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