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STP11N52K3 датащи(PDF) 7 Page - STMicroelectronics

номер детали STP11N52K3
подробное описание детали  N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET
PDF  20 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP11N52K3 датащи(HTML) 7 Page - STMicroelectronics

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STB11N52K3, STF11N52K3, STP11N52K3
Electrical characteristics
Doc ID 018868 Rev 2
7/20
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Static drain-source on resistance
Figure 10.
Capacitance variations
Figure 11.
Output capacitance stored energy
Figure 12.
Normalized gate threshold voltage
vs temperature
Figure 13.
Normalized on resistance vs
temperature
VGS
6
4
2
0
0
Qg(nC)
(V)
8
20
10
VDD=420V
ID=10A
40
12
300
200
100
0
400
VDS
60
350
250
150
50
AM09116v1
RDS(on)
0.42
0.40
0.38
0.36
0
4
ID(A)
(
Ω)
2
6
0.44
0.46
0.48
0.50
VGS=10V
8
0.52
0.54
10
12
AM09117v1
C
1000
100
10
1
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
AM09118v1
Eoss
3
2
1
0
0
100
VDS(V)
(µJ)
400
4
200
300
5
6
500
AM09119v1
VGS(th)
1.00
0.90
0.80
0.70
-75
TJ(°C)
(norm)
-25
1.10
75
25
125
AM09120v1
RDS(on)
1.5
1.0
0.5
0.0
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
2.5
2.0
ID=1.2A
AM09121v1



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