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STP11N52K3 датащи(PDF) 1 Page - STMicroelectronics

номер детали STP11N52K3
подробное описание детали  N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET
PDF  20 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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This is information on a product in full production.
March 2012
Doc ID 018868 Rev 2
1/20
20
STB11N52K3, STF11N52K3
STP11N52K3
N-channel 525 V, 0.41
Ω, 10 A SuperMESH3™ Power MOSFET
in D²PAK,TO-220FP and TO-220 packages
Datasheet — production data
Features
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
made using the SuperMESH3™ technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting transistor has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Figure 1.
Internal schematic diagram
Order codes
VDSS
RDS(on)
max.
ID
Pw
STB11N52K3
525 V
< 0.51
Ω
10 A
125 W
STF11N52K3
30 W
STP11N52K3
125 W
TO-220
TO-220FP
1
2
3
D²PAK
1
2
3
TAB
1
3
TAB
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Packages
Packaging
STB11N52K3
STF11N52K3
STP11N52K3
11N52K3
D²PAK
TO-220FP
TO-220
Tape and reel
Tube
Tube
www.st.com


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