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MPC8315 датащи(PDF) 20 Page - Freescale Semiconductor, Inc |
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MPC8315 датащи(HTML) 20 Page - Freescale Semiconductor, Inc |
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20 / 106 page ![]() MPC8315E PowerQUICC II Pro Processor Hardware Specifications, Rev. 2 20 Freescale Semiconductor DDR and DDR2 SDRAM This table provides the current draw characteristics for MVREF. 7.2 DDR and DDR2 SDRAM AC Electrical Characteristics This section provides the AC electrical characteristics for the DDR and DDR2 SDRAM interface. 7.2.1 DDR and DDR2 SDRAM Input AC Timing Specifications This table lists the input AC timing specifications for the DDR2 SDRAM (GVDD(typ) = 1.8 V). This table lists the input AC timing specifications for the DDR SDRAM when GVDD(typ)=2.5 V. The following two tables list the input AC timing specifications for the DDR SDRAM interface. Delta input/output capacitance: DQ, DQS CDIO —0.5 pF 1 Note: 1. This parameter is sampled. GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA =25C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V. Table 15. Current Draw Characteristics for MVREF Parameter / Condition Symbol Min Max Unit Note Current draw for MVREF IMVREF — 500 A1 Note: 1. The voltage regulator for MVREF must be able to supply up to 500 A current. Table 16. DDR2 SDRAM Input AC Timing Specifications for 1.8-V Interface At recommended operating conditions with GVDD of 1.8V ± 100 mV Parameter Symbol Min Max Unit Note AC input low voltage VIL — MVREF – 0.45 V — AC input high voltage VIH MVREF + 0.45 — V — Table 17. DDR SDRAM Input AC Timing Specifications for 2.5 V Interface At recommended operating conditions with GVDD of 2.5V ± 200 mV Parameter Symbol Min Max Unit Note AC input low voltage VIL — MVREF – 0.51 V AC input high voltage VIH MVREF + 0.51 — V Table 18. DDR2 SDRAM Input AC Timing Specifications At recommended operating conditions with GVDD of (1.8 V± 100 mV) Parameter Symbol Min Max Unit Note Controller Skew for MDQS—MDQ 266 MHz 200 MHz tCISKEW –875 –1250 875 1250 ps 1, 2, 3 Table 14. DDR SDRAM Capacitance for GVDD(typ) = 2.5 V Interface |
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