STH270N4F3-6 datasheet(4/19 Pages) STMICROELECTRONICS

номер детали	STH270N4F3-6

подробное описание детали	N-channel 40 V, 1.4 mΩ typ., 180 A STripFET™III Power MOSFET in H2PAK-2 and H2PAK-6 packages

PDF	19 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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4 / 19 page

Electrical characteristics

STH270N4F3-2, STH270N4F3-6

4/19

DocID16957 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 250 µA

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 40 V

µA

VGS = 0,

VDS = 40 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 20 V

±200

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 80 A

1.4

1.7

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

7400

Coss

Output capacitance

1800

-pF

Crss

Reverse transfer

capacitance

-pF

Total gate charge

VDD = 20 V, ID = 160 A,

VGS = 10 V

(see Figure 14)

-110

150

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 80 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 2)

-25

Rise time

180

td(off)

Turn-off delay time

110

Fall time

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