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STH270N4F3-6 датащи(PDF) 3 Page - STMicroelectronics

номер детали STH270N4F3-6
подробное описание детали  N-channel 40 V, 1.4 mΩ typ., 180 A STripFET™III Power MOSFET in H2PAK-2 and H2PAK-6 packages
PDF  19 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STH270N4F3-6 датащи(HTML) 3 Page - STMicroelectronics

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DocID16957 Rev 2
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STH270N4F3-2, STH270N4F3-6
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
40
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
Current limited by package.
Drain current (continuous) at TC = 25 °C
180
A
ID
(1)
Drain current (continuous) at TC = 100 °C
180
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
720
A
PTOT
(3)
3.
This value is rated according to Rthj-c
Total dissipation at TC = 25 °C
300
W
Derating factor
2
W/°C
EAS
(4)
4.
Starting TJ=25°C, ID=80 A, VDD=32 V
Single pulse avalanche energy
1000
mJ
Tstg
Storage temperature
- 55 to 175
°C
Tj
Operating junction temperature
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
0.5
°C/W
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1 inch², 2oz Cu.
Thermal resistance junction-pcb max
35
°C/W



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