IXGN60N60C2 datasheet(3/5 Pages) IXYS

номер детали	IXGN60N60C2

подробное описание детали	HiPerFASTTM IGBTs with Diode

PDF	5 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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3 / 5 page

IXGN60N60C2

IXGN60N60C2D1

Fig. 2. Extended Output Characteristics

@ 25 deg. C

100

125

150

175

200

11.5

2.533.5

44.5

CE - V olts

GE = 15V

13V

11V

Fig. 3. Output Characteristics

@ 125 Deg. C

100

0.5

1.5

2.5

3.5

CE - V olts

GE = 15V

13V

11V

Fig. 1. Output Characteristics

@ 25 Deg. C

100

0.5

1.5

2.5

3.5

CE - V olts

GE = 15V

13V

11V

Fig. 6. Input Admittance

100

125

150

175

200

3.5

4.5

5.5

6.577.588.5

GE - V olts

J = 125º C

º C

-40

º C

Fig. 4. Temperature Dependence of VCE(sat)

0.5

0.6

0.7

0.8

0.9

1.1

1.2

100

125

150

J - Degrees Centigrade

C = 100A

C = 50A

C = 25A

GE = 15V

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter voltage

1.5

2.5

3.5

4.5

111213

1415

GE - V olts

J = 25º C

I C = 100A

50A

25A

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