IXGN60N60C2

IXGN60N60C2D1

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

SOT-227B miniBLOC

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

40

58

S

C

ies

4750

pF

C

oes

V

530

pF

C

res

65

pF

Q

g

146

nC

Q

ge

I

28

nC

Q

gc

50

nC

t

d(on)

18

ns

t

ri

25

ns

t

d(off)

95

150

ns

t

fi

35

ns

E

off

0.48

0.80

mJ

t

d(on)

18

ns

t

ri

25

ns

E

on

0.90

mJ

t

d(off)

130

ns

t

fi

80

ns

E

off

1.20

mJ

R

thJC

0.26 °C/W

R

thCS

0.05

°C/W

Inductive load, T

I

V

Inductive load, T

I

V

Reverse Diode (FRED)

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

F

2.1

V

1.4

V

I

RM

8.3

A

t

rr

35

ns

R

thJC

0.85 °C/W

I

T

I

T

V

I

Note 1: PulseTest, t

≤ 300μs, Duty Cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537