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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F103RG датащи(PDF) 59 Page - STMicroelectronics |
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STM32F103RG датащи(HTML) 59 Page - STMicroelectronics |
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59 / 120 page  STM32F103xF, STM32F103xG Electrical characteristics Doc ID 16554 Rev 3 59/120 Low-speed internal (LSI) RC oscillator Wakeup time from low-power mode The wakeup times given in Table 27 is measured on a wakeup phase with a 8-MHz HSI RC oscillator. The clock source used to wake up the device depends from the current operating mode: ● Stop or Standby mode: the clock source is the RC oscillator ● Sleep mode: the clock source is the clock that was set before entering Sleep mode. All timings are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 10. Table 26. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI (2) 2. Based on characterization, not tested in production. Frequency 30 40 60 kHz tsu(LSI) (3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time - - 85 µs IDD(LSI) (3) LSI oscillator power consumption - 0.65 1.2 µA Table 27. Low-power mode wakeup timings Symbol Parameter Typ Unit tWUSLEEP (1) 1. The wakeup times are measured from the wakeup event to the point in which the user application code reads the first instruction. Wakeup from Sleep mode 1.8 µs tWUSTOP (1) Wakeup from Stop mode (regulator in run mode) 3.6 µs Wakeup from Stop mode (regulator in low power mode) 5.4 tWUSTDBY (1) Wakeup from Standby mode 50 µs |
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