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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IXTP32N20T датащи(PDF) 1 Page - IXYS Corporation |
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IXTP32N20T датащи(HTML) 1 Page - IXYS Corporation |
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1 / 6 page  © 2010 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 175°C 200 V V DGR T J = 25 °C to 175°C, R GS = 1MΩ 200 V V GSS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C32 A I DM T C = 25°C, Pulse Width Limited by TJM 64 A I A T C = 25°C16 A E AS T C = 25°C 250 mJ dv/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns P D T C = 25°C 200 W T J - 55 ... +175 °C T JM 175 °C T stg - 55 ... +175 °C T L 1.6mm (0.062in.) from Case for 10s 300 °C T sold Plastic Body for 10 Seconds 260 °C M d Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-263 2.5 g TO-220 3.0 g Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 200 V V GS(th) V DS = VGS, ID = 250μA 3.0 5.0 V I GSS V GS = ± 20V, VDS = 0V ±100 nA I DSS V DS = VDSS, VGS= 0V 3 μA T J = 150°C 200 μA R DS(on) V GS = 10V, ID = 0.5 • ID25, Notes 1, 2 78 m Ω TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA32N20T IXTP32N20T V DSS = 200V I D25 = 32A R DS(on) ≤ ≤≤≤≤ 78m Ω Ω Ω Ω Ω DS99959B(10/10) Features International Standard Packages 175°C Operating Temperature Avalanche Rated Low R DS(on) Fast Intrinsic Rectifier High Current Handling Capability Advantages Easy to Mount Space Savings High Power Density Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications G = Gate D = Drain S = Source Tab = Drain TO-263 AA (IXTA) G D S TO-220AB (IXTP) D (Tab) G S D (Tab) |
Аналогичный номер детали - IXTP32N20T |
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Аналогичное описание - IXTP32N20T |
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