IXTP32N20T datasheet(2/6 Pages) IXYS

2 / 6 page

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA32N20T

IXTP32N20T

Symbol

Test Conditions

Characteristic Values

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

DS = 10V, ID = 0.5 • ID25, Note 1

iss

1760

oss

GS = 0V, VDS = 25V, f = 1MHz

212

rss

d(on)

d(off)

g(on)

GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

thJC

0.75

°C/W

thCH

TO-220

0.50

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

GS = 0V

Repetitive, Pulse Width Limited by T

128

F = IS, VGS = 0V, Note 1

1.2

110

6.90

0.38

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. On through-hole packages, R

DS(on) Kelvin test contact location must be

5mm or less from the package body.

Resistive Switching Times

GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

G = 10Ω (External)

F = 0.5 • ID25, VGS = 0V

-di/dt = 100A/

μs

R = 0.5 • VDSS

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Pins: 1 - Gate

2 - Drain

3 - Source

TO-220 Outline

TO-263 Outline

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