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IXTP32N20T датащи(PDF) 3 Page - IXYS Corporation

номер детали IXTP32N20T
подробное описание детали  TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
PDF  6 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP32N20T датащи(HTML) 3 Page - IXYS Corporation

  IXTP32N20T Datasheet HTML 1Page - IXYS Corporation IXTP32N20T Datasheet HTML 2Page - IXYS Corporation IXTP32N20T Datasheet HTML 3Page - IXYS Corporation IXTP32N20T Datasheet HTML 4Page - IXYS Corporation IXTP32N20T Datasheet HTML 5Page - IXYS Corporation IXTP32N20T Datasheet HTML 6Page - IXYS Corporation  
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© 2010 IXYS CORPORATION, All Rights Reserved
IXTA32N20T
IXTP32N20T
Fig. 1. Output Characteristics @ TJ = 25ºC
0
4
8
12
16
20
24
28
32
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
VDS - Volts
VGS = 10V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
0
10
20
30
40
50
60
70
80
90
0
5
10
15
20
25
30
VDS - Volts
VGS = 10V
8V
5V
6V
7V
Fig. 3. Output Characteristics @ TJ = 150ºC
0
4
8
12
16
20
24
28
32
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
VDS - Volts
VGS = 10V
8V
7V
5V
6V
Fig. 4. RDS(on) Normalized to ID = 16A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VGS = 10V
I D = 32A
I D = 16A
Fig. 5. RDS(on) Normalized to ID = 16A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
5
10
15
20
25
30
35
40
45
50
55
60
ID - Amperes
VGS = 10V
TJ = 175ºC
TJ = 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
4
8
12
16
20
24
28
32
36
-50
-25
0
25
50
75
100
125
150
175
TC - Degrees Centigrade



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