64GA110 datasheet(61/330 Pages) MICROCHIP

61 / 330 page

 2010 Microchip Technology Inc.

DS39905E-page 61

PIC24FJ256GA110 FAMILY

EXAMPLE 5-2:

ERASING A PROGRAM MEMORY BLOCK (C LANGUAGE CODE)

EXAMPLE 5-3:

LOADING THE WRITE BUFFERS (ASSEMBLY LANGUAGE CODE)

// C example using MPLAB C30

unsigned long progAddr = 0xXXXXXX;

// Address of row to write

unsigned int offset;

//Set up pointer to the first memory location to be written

TBLPAG = progAddr>>16;

// Initialize PM Page Boundary SFR

offset = progAddr & 0xFFFF;

// Initialize lower word of address

__builtin_tblwtl(offset, 0x0000);

// Set base address of erase block

// with dummy latch write

NVMCON = 0x4042;

// Initialize NVMCON

asm("DISI #5");

// Block all interrupts with priority <7

// for next 5 instructions

__builtin_write_NVM();

// C30 function to perform unlock

// sequence and set WR

; Set up NVMCON for row programming operations

MOV

#0x4001, W0

;

MOV

W0, NVMCON

; Initialize NVMCON

; Set up a pointer to the first program memory location to be written

; program memory selected, and writes enabled

MOV

#0x0000, W0

;

MOV

W0, TBLPAG

; Initialize PM Page Boundary SFR

MOV

#0x6000, W0

; An example program memory address

; Perform the TBLWT instructions to write the latches

; 0th_program_word

MOV

#LOW_WORD_0, W2

;

MOV

#HIGH_BYTE_0, W3

;

TBLWTL

W2, [W0]

; Write PM low word into program latch

TBLWTH

W3, [W0++]

; Write PM high byte into program latch

; 1st_program_word

MOV

#LOW_WORD_1, W2

;

MOV

#HIGH_BYTE_1, W3

;

TBLWTL

W2, [W0]

; Write PM low word into program latch

TBLWTH

W3, [W0++]

; Write PM high byte into program latch

;

2nd_program_word

MOV

#LOW_WORD_2, W2

;

MOV

#HIGH_BYTE_2, W3

;

TBLWTL

W2, [W0]

; Write PM low word into program latch

TBLWTH

W3, [W0++]

; Write PM high byte into program latch

•

; 63rd_program_word

MOV

#LOW_WORD_31, W2

;

MOV

#HIGH_BYTE_31, W3

;

TBLWTL

W2, [W0]

; Write PM low word into program latch

TBLWTH

W3, [W0]

; Write PM high byte into program latch

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