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JS28F128J3C120 датащи(PDF) 45 Page - Intel Corporation

номер детали JS28F128J3C120
подробное описание детали  Intel StrataFlash짰 Memory
PDF  72 Pages
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производитель  INTEL [Intel Corporation]
домашняя страница  http://www.intel.com
Logo INTEL - Intel Corporation

JS28F128J3C120 датащи(HTML) 45 Page - Intel Corporation

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45
The only other valid commands while block erase is suspended are Read Query, Read Status
Register, Clear Status Register, Configure, and Block Erase Resume. After a Block Erase Resume
command is written to the flash memory, the WSM will continue the block erase process. SR.6 and
SR.7 will automatically clear and STS (in default mode) will return to VOL. After the Erase
Resume command is written, the device automatically outputs SRD when read (see Figure 23,
“Block Erase Suspend/Resume Flowchart” on page 64). VPEN must remain at VPENH (the same
VPEN level used for block erase) while block erase is suspended. Block erase cannot resume until
program operations initiated during block erase suspend have completed.
12.3
Erase Resume
To resume (i.e., continue) an erase suspend operation, execute the Erase Resume command. The
Resume command can be written to any device address. When a program operation is nested
within an erase suspend operation and the Program Suspend command is issued, the device will
suspend the program operation. When the Resume command is issued, the device will resume the
program operations first. Once the nested program operation is completed, an additional Resume
command is required to complete the block erase operation. The device supports a maximum
suspend/resume of two nested routines. See Figure 22, “Block Erase Flowchart” on page 63.



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