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ADF4113BCP датащи(PDF) 4 Page - Analog Devices

номер детали ADF4113BCP
подробное описание детали  RF PLL Frequency Synthesizers
PDF  24 Pages
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ADF4113BCP датащи(HTML) 4 Page - Analog Devices

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REV. 0
ADF4110/ADF4111/ADF4112/ADF4113
–4–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumu-
late on the human body and test equipment and can discharge without detection. Although the
ADF4110/ADF4111/ADF4112/ADF4113 features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
1, 2
(TA = 25
°C unless otherwise noted)
AVDD to GND
3
. . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
AVDD to DVDD . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
VP to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VP to AVDD . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V
Digital I/O Voltage to GND . . . . . . . . –0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND . . . . . . . . . –0.3 V to VP + 0.3 V
REFIN, RFINA, RFINB to GND . . . . . . –0.3 V to VDD + 0.3 V
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . .
–40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . 150
°C
TSSOP
θJA Thermal Impedance . . . . . . . . . . . . . 150.4°C/W
CSP
θJA Thermal Impedance (Paddle Soldered) . . . 122°C/W
CSP
θJA Thermal Impedance
(Paddle Not Soldered) . . . . . . . . . . . . . . . . . . . . . 216
°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2This device is a high-performance RF integrated circuit with an ESD rating of
< 2 kV and it is ESD sensitive. Proper precautions should be taken for handling
and assembly.
3 GND = AGND = DGND = 0 V.
TRANSISTOR COUNT
6425 (CMOS) and 303 (Bipolar).
ORDERING GUIDE
Model
Temperature Range
Package Description
Package Option
*
ADF4110BRU
–40
°C to +85°C
Thin Shrink Small Outline Package (TSSOP)
RU-16
ADF4110BCP
–40
°C to +85°C
Chip Scale Package (CSP)
CP-20
ADF4111BRU
–40
°C to +85°C
Thin Shrink Small Outline Package (TSSOP)
RU-16
ADF4111BCP
–40
°C to +85°C
Chip Scale Package (CSP)
CP-20
ADF4112BRU
–40
°C to +85°C
Thin Shrink Small Outline Package (TSSOP)
RU-16
ADF4112BCP
–40
°C to +85°C
Chip Scale Package (CSP)
CP-20
ADF4113BRU
–40
°C to +85°C
Thin Shrink Small Outline Package (TSSOP)
RU-16
ADF4113BCP
–40
°C to +85°C
Chip Scale Package (CSP)
CP-20
ADF4113BCHIPS
–40
°C to +85°C
DICE
DICE
*Contact the factory for chip availability.
CLOCK
DATA
LE
LE
DB20 (MSB)
DB19
DB2
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t6
t5
t1
t2
t3
t4
Figure 1. Timing Diagram



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