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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TPS65166 датащи(PDF) 3 Page - Texas Instruments |
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TPS65166 датащи(HTML) 3 Page - Texas Instruments |
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3 / 41 page  ELECTRICAL CHARACTERISTICS TPS65166 www.ti.com.......................................................................................................................................................................................... SLVS976 – SEPTEMBER 2009 AVIN=VIN1=VIN2=VIN3=12V, EN1=EN2=VIN, VS=15V, Vlogic=3.3V, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VIN Input voltage range 8.5 14.7 V IQIN Quiescent current into AVIN, VIN1,2,3 Not switching, FB=FB+5% 1.2 mA Isd Shutdown current into AVIN, VIN1,2,3 EN1=EN2=GND 170 µA VUVLO Under-voltage lockout threshold VIN falling 8.0 8.2 V VUVLO Under-voltage lockout threshold VIN rising 8.2 8.5 V Thermal shutdown Temperature rising 150 °C Thermal shutdown hysteresis 15 °C LOGIC SIGNALS EN1, EN2, HVS VIH High level input voltage VIN = 8.5V to 14.7V 1.7 V VIL Low level input voltage VIN = 8.5V to 14.7V 0.4 V II Input leakage current EN1=EN2=GND 0.01 0.1 µA POWER GOOD VIL Low level voltage(1) I(sink) = 500µA 0.3 V Ilkg Leakage current VPG = 5.0V 0.01 0.1 µA SEQUENCING DLY1, DLY2, and SOFT-START Ichrg DLY1, DLY2 charge current Vthreshold = 1.24V 4 4.9 6.3 µA Vthreshold DLY1, DLY2 threshold voltage 1.21 1.24 1.27 V Rdischrg DLY1, DLY2 discharge resistor 3.2 k Ω ISS Soft-start charge current Vthreshold = 1.24V 8 10 12 µA SWITCHING FREQUENCY fs Switching frequency 600 750 900 kHz BOOST CONVERTER (Vs) Vs Output voltage range 19 V Vswovp Switch overvoltage protection Vs rising 19.0 19.5 20 V VFB1 Feedback regulation voltage 1.225 1.24 1.252 V IFB1 Feedback input bias current VFB1 = 1.24V 10 100 nA RDS(on) N-MOSFET on-resistance ISW = 500mA 120 170 m Ω ILIM N-MOSFET switch current limit 4.2 5.2 6.2 A Ileak Switch leakage current Vsw = 15V 1 10 µA ton Minimum on time 80 ns Line regulation 8.5V ≤ VIN ≤ 14.7V, Iout = 1mA 0.006 %/V Load regulation 1mA ≤ Iout ≤ 2.0A 0.1 %/A GATE DRIVE (GD) AND BOOST CONVERTER PROTECTION VGDM VIN – VGD (2) VIN = 12V, GD pulled down 5 6 7 V I(GD) Gate drive sink current EN2 = high 10 µA R(GD) Gate drive internal pull up resistance 10 k Ω ton Gate on time during short circuit FB1 < 100mV 1.4 ms BUCK CONVERTER (Vlogic) Vlogic Output voltage range 2.2 4.0 V FB2 connected to resistor divider, VFB2 Feedback regulation voltage 1.215 1.24 1.265 V Iload = 10mA IFB2 Feedback input bias current VFB2 = 1.24V 10 100 nA RDS(on) N-MOSFET on-resistance Isw3, Isw4 = 1.5A 150 250 m Ω (1) PG goes high impedance once Vs and VONE are in regulation. (2) GD goes to VIN – VGD once the boost converter Vs is enabled. Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPS65166 |
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