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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IXDN0036 датащи(PDF) 17 Page - IXYS Corporation |
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IXDN0036 датащи(HTML) 17 Page - IXYS Corporation |
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17 / 41 page  Device Design & Application ATAVRFBKIT / EVLD001 User Guide 5-17 7597A–AVR–02/06 standby mode is desired. Overall power consumption can be reduced by allowing the microcontroller to enter a low power mode and shut down PFC operation without having to reboot the microcontroller. Since the R-C combination cannot provide enough power to sustain microcontroller operation, the microcontroller must stay active running the PFC section to power itself. 5.5 IXYS IXTP3N50P PolarHVTM N- Channel Power MOSFET The IXTP3N50P is a 3A 500V general purpose power MOSFET that comes from the family of IXYS PolarHV MOSFETs. When comparing equivalent die sizes, PolarHT results in 50% lower RDS(ON), 40% lower RTHJC (thermal resis- tance, junction to case), and 30% lower Qg (gate charge) enabling a 30% - 40% die shrink, with the same or better performance verses the 1st generation power MOSFETs. Within the ballast demonstrator itself the IXTP3N50 serves two functions. The first of which is the power switching pair of devices in the half-bridge circuit that drives the lamps. While a third device serves in the main PFC circuit as the power switch that drives the PFC inductor. |
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