ZXLD1371QESTTC datasheet(30/42 Pages) DIODES

30 / 42 page

ZXLD1371

Document number: DS35436 Rev. 1 - 2

30 of 42

www.diodes.com

February 2012

A Product Line of

Diodes Incorporated

Applications Information (cont.)

Example 2)

Using the ZXMN6A09K (VDS(MAX) = 60V, ID(MAX) = 12.2A):

QG = 29nC at VGS = 10V

ZXLD1371 IPEAK = 300mA

Assuming that cumulatively the rise time and fall time can account for a maximum of 10% of the period, the maximum

frequency allowed in this condition is:

tPERIOD = 20*dt

f = 1/ tPERIOD = 515kHz

This frequency is within the recommended frequency range the device can handle, therefore the ZXMN6A09K is

recommended to be used with the ZXLD1371 for frequencies from 300kHz to 500kHz).

The recommended total gate charge for the MOSFET used in conjunction with the ZXLD1371 is less than 30nC.

Junction Temperature Estimation

Finally, the ZXLD1371 junction temperature can be estimated using the following equations:

Total supply current of ZXLD1371:

IQTOT ≈ IQ + f • QG

Where IQ = total quiescent current IQ-IN + IQ-AUX

Power consumed by ZXLD1371

PIC = VIN • (IQ + f • Qg)

Or in case of separate voltage supply, with VAUX < 15V

PIC = VIN • IQ-IN + Vaux • (IQ-AUX + f • Qg)

TJ =

TA + PIC • θJA =

TA + PIC • (θJC + θCA)

Where the total quiescent current IQTOT consists of the static supply current (IQ) and the current required to charge and

discharge the gate of the power MOSFET. Moreover the part of thermal resistance between case and ambient depends on

the PCB characteristics.

Figure 8. Power derating curve for ZXLD1370

mounted on test board according to JESD51

300

PEAK

0.5

1.5

2.5

-40 -25 -10

35 50

65 80 95 110 125

AMBIENT TEMPERATURE (°C)

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