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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MSC1202Y2RHHT датащи(PDF) 2 Page - Texas Instruments |
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MSC1202Y2RHHT датащи(HTML) 2 Page - Texas Instruments |
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2 / 92 page  MSC1200 MSC1201 MSC1202 SBAS317E − APRIL 2004 − REVISED MAY 2006 www.ti.com 2 PACKAGE/ORDERING INFORMATION(1) PRODUCT FLASH MEMORY (BYTES) ADC RESOLUTION (BITS) PACKAGE MARKING MSC1200Y2 4k 24 MSC1200Y2 MSC1200Y2 4k 24 MSC1200Y2 MSC1200Y3 8k 24 MSC1200Y3 MSC1200Y3 8k 24 MSC1200Y3 MSC1201Y2 4k 24 MSC1201Y2 MSC1201Y2 4k 24 MSC1201Y2 MSC1201Y3 8k 24 MSC1201Y3 MSC1201Y3 8k 24 MSC1201Y3 MSC1202Y2 4k 16 MSC1202Y2 MSC1202Y2 4k 16 MSC1202Y2 MSC1202Y3 8k 16 MSC1202Y3 MSC1202Y3 8k 16 MSC1202Y3 (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this datasheet, or refer to our web site at www.ti.com. MSC120x FAMILY FEATURES FEATURES(1) MSC120xY2(2) MSC120xY3(2) Flash Program Memory (Bytes) Up to 4k Up to 8k Flash Data Memory (Bytes) Up to 2k Up to 4k Internal Scratchpad RAM (Bytes) 256 256 (1) All peripheral features are the same on all devices; the flash memory size is the only difference. (2) The last digit of the part number (N) represents the onboard flash size = (2N)kBytes. This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ABSOLUTE MAXIMUM RATINGS(1) MSC120x UNITS Analog Inputs Input current Momentary 100 mA Input current Continuous 10 mA Input voltage AGND − 0.3 to AVDD + 0.3 V Power Supply DVDD to DGND −0.3 to +6 V AVDD to AGND −0.3 to +6 V AGND to DGND −0.3 to +0.3 V VREF to AGND −0.3 to AVDD + 0.3 V Digital input voltage to DGND −0.3 to DVDD + 0.3 V Digital output voltage to DGND −0.3 to DVDD + 0.3 V Maximum junction temperature (TJ Max) +150 °C Operating temperature range −40 to +125 °C Storage temperature range −65 to +150 °C Package power dissipation (TJ Max − TAMBIENT)/qJA W Output current, all pins 200 mA Output pin short-circuit 10 s Junction to ambient ( qJA) High K (2s 2p) 21.9 °C/W Thermal resistance Junction to ambient ( qJA) Low K (1s) 103.7 °C/W Thermal resistance Junction to case ( qJC) 21.9 °C/W Digital Outputs Output current Continuous 100 mA I/O source/sink current 100 mA Power pin maximum 300 mA (1) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods may affect device reliability. |
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