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CPWR-AN08, REV -

Application Considerations for SiC MOSFETs -

January 2011

Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero

Recovery are registered trademarks of Cree, Inc.

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

Fax: +1.919.313.5451

www.cree.com/power

This document is provided for informational purposes only and is not a warranty or a specification. This product is currently

available for evaluation and testing purposes only, and is provided “as is” without warranty. For preliminary, non-binding product

specifications, please see the preliminary data sheet available at www.cree.com/power.

Application Considerations for SiC MOSFETs

January 2011

7

The CMF20120D has definite system advantages over competing Si switching devices. However, its

unique operating characteristics need to be carefully considered to fully realize these advantages. The

gate driver needs to be capable of providing +20V and -2V to -5V negative bias with minimum output

impedance and high current capability. The parasitics between the gate driver and the CMF20120D need

to be minimized (close location, separate source return, etc.) to assure that the gate pulse has a fast rise

and fall time with good fidelity. The fast switching speed of the CMF20120D can result in higher ringing

and voltage overshoots. The effects of parasitics in the high current paths need to be carefully assessed.

References:

[1] R. J. Callanan, A. Agarwal, A Burk, M. Das, B. Hull, F. Husna, A. Powell, J. Richmond, Sei-Hyung

Ryu, and Q. Zhang, “Recent Progress in SiC DMOSFETs and JBS Diodes at Cree”, IEEE Industrial

Electronics 34

[2] Infineon IPW90R120C3 CoolMOS Datasheet, Rev 1.0, 2008-07-30.

http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IPW90R120C3

[3] Fairchild FGA20N120FGD Datasheet, Rev A, December 2007

http://www.fairchildsemi.com/ds/FG%2FFGA20N120FTD.pdf

info/datasheets/data/irgp20b120u-e.pdf

[5]

Microsemi APT34M120J Datasheet, 050-8088 Rev A, 2-2007

http://www.microsemi.com/datasheets/APT34M120J_A.PDF

[6] F. Bjoerk, J. Handcock, and G. Deboy, “CoolMOSTM CP – How to make most beneficial use of the

latest generation of super junction technology devices”, Infineon Application Note AN-CoolMOS-CP-

01, Version 1.1, Feb 2007.

http://www.infineon.com/dgdl/Aplication+Note+CoolMOS+CP+(+AN_CoolMOS_CP_01_Rev.+1.2).pdf

?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40ac9a40688

Summary