3

Application Considerations for SiC MOSFETs

January 2011

CPWR-AN08, REV -

Application Considerations for SiC MOSFETs -

January 2011

This document is provided for informational purposes only and is not a warranty or a specification.

For product specifications, please see the data sheets available at www.cree.com/power. For warranty

information, please contact Cree Sales at PowerSales@cree.com.

Figure 2: Forward conduction characteristics

One of the key advantages to SiC is the high temperature capability afforded by the wide bandgap. This

is clearly reflected in the leakage current comparison at elevated temperature shown in Figure 3. The

CMF20120D has about 20x lower leakage current at 150 °

current increases dramatically, to the point where the device fails due to excess power dissipation. The

CMF20120D leakage current is still acceptable

devices.

Figure 3: High temperature leakage current comparison

As previously mentioned, the recommended gate drive voltage for the

5V negative bias. However, the amount of gate charge required to switch the device is low. The

1E-7

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

0

200

400

600

4

One of the key advantages to SiC is the high temperature capability afforded by the wide bandgap. This

is clearly reflected in the leakage current comparison at elevated temperature shown in Figure 3. The

has about 20x lower leakage current at 150 °C. At 200 °C, the Si comparison parts leakage

current increases dramatically, to the point where the device fails due to excess power dissipation. The

leakage current is still acceptable at this temperature and is over 100x lower than the Si

Figure 3: High temperature leakage current comparison

As previously mentioned, the recommended gate drive voltage for the CMF20120D is +

. However, the amount of gate charge required to switch the device is low. The

800

1000

1200

(V)

TFS IGBT

= 15V)

One of the key advantages to SiC is the high temperature capability afforded by the wide bandgap. This

is clearly reflected in the leakage current comparison at elevated temperature shown in Figure 3. The

°C, the Si comparison parts leakage

current increases dramatically, to the point where the device fails due to excess power dissipation. The

over 100x lower than the Si

+20V and -2V to -

. However, the amount of gate charge required to switch the device is low. The