ACT5830 datasheet(25/41 Pages) ACTIVE-SEMI

25 / 41 page

LDO1

ACT5830

Rev 2, 20-Jan-11

Innovative Power

- 25 -

www.active-semi.com

ActivePMU

TM is a trademark of Active-Semi.

2CTM is a trademark of NXP.

ELECTRICAL CHARACTERISTICS

(VIN1 = 3.6V, COUT1 = 1µF, TA = 25°C unless otherwise specified.)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Input Supply Range

3.1

5.5

Input Under Voltage Lockout

VIN1 Input Rising

2.9

3.1

UVLO Hysteresis

VIN1 Input Falling

0.1

Output Voltage Accuracy

TA = 25°C

-1.2

TA = -40°C to 85°C

-2.5

Line Regulation Error

VIN1 = Max (VNOM1 + 0.5V, 3.1V) to 5.5V

mV/V

Load Regulation Error

IOUT1 = 1mA to 300mA

-0.004

%/mA

Power Supply Rejection Ratio

f = 1kHz, IOUT1 = 300mA, COUT1 = 1µF

f = 10kHz, IOUT1 = 300mA, COUT1 = 1µF

Supply Current per Output

LDO1 Enabled

µA

LDO1 Disabled

Dropout Voltage2

IOUT1 = 150mA

100

200

Output Current

300

Current Limit

VOUT1 = 95% of Regulation Voltage

330

580

Current Limit Short Circuit Fold-

back

VOUT1 = 0V

0.45 x ILIM

Internal Soft-Start

100

µs

Power Good Flag High Threshold

VOUT1, Hysteresis = -1%

Output Noise

COUT1 = 10µF, f = 10Hz to 100kHz

µVRMS

Stable COUT1

µF

: VNOM refers to the nominal output voltage level for LDO1 as defined by the Ordering Information section.

: Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regu-

lation voltage at 1V differential voltage.

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