3

Barrier Silicon Schottky Diodes

M/A-COM Products

Rev. V9

MA4E2502 Series

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North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

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India Tel: +91.80.43537383

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China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Applications Section

The MA4E2502L-1246 chip was evaluated in a detector circuit in which the Schottky diode terminates a

50 ohm transmission line on a duroid substrate. The chip was attached to the terminal of a 3.5mm

connector and the output voltage was measured through a bias tee on a voltmeter.

Matching was not attempted.

MA4E2502L-1246

Frequency (GHz) vs. Output Voltage (V)

0.01

0.1

1

10

8

11

1417

2023

Frequency (GHz)

-20 dBm

-10 dBm

0 dBm

+10 dBm

+20 dBm

MA4E2502L-1246

Input Pow er (dBm ) vs. Output Voltage (V)

0.01

0.1

1

10

-20

-15

-10

-5

0

5

10

Input Pow er (dBm )

8 GHz

18 GHz

23 GHz