2

Barrier Silicon Schottky Diodes

M/A-COM Products

Rev. V9

MA4E2502 Series

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North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

•

India Tel: +91.80.43537383

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China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Electrical Specifications @ 25°C

Model

Number

Type

Recommended

Freq. Range

Vf @ 1 mA

(mV)

Vb @ 10 uA

(V)

Ct @ 0 V

(pF)

Rt Slope Resistance

(Vf1-Vf2)/(10.5mA-9.5mA)

(Ω)

MA4E2502L

Low Barrier

DC - 18 GHz

330 Max

300 Typ

3 Min

5 Typ

0.12 Max

0.10 Typ

16 Typ

20 Max

MA4E2502M

Medium

Barrier

DC - 18 GHz

470 Max

420 Typ

3 Min

5 Typ

0.12 Max

0.10 Typ

12 Typ

18 Max

MA4E2502H

High Barrier

DC - 18 GHz

700 Max

650 Typ

3 Min

5 Typ

0.12 Max

0.10 Typ

11 Typ

15 Max

1. Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA)

Handling

All semiconductor chips should be handled with

care to avoid damage or contamination from per-

spiration and skin oils. The use of plastic tipped

tweezers or vacuum pickups is strongly recom-

mended for individual components.

The top sur-

face of the die has a protective polyimide coating to

minimize damage.

The rugged construction of these Surmount de-

vices allows the use of standard handling and die

attach techniques. It is important to note that in-

dustry standard electrostatic discharge (ESD) con-

trol is required at all times, due to the sensitive na-

ture of Schottky junctions.

Bulk handling should insure that abrasion and me-

chanical shock are minimized.

Absolute Maximum Ratings @ 25°C

Parameter

Absolute Maximum

Operating Temperature

-40°C to +125°C

Storage Temperature

-40°C to +150°C

Junction Temperature

+175°C

Forward Current

20 mA

Reverse Voltage

5 V

RF C.W. Incident Power

+20 dBm

RF & DC Dissipated Power

50 mW

Electrostatic Discharge

( ESD ) Classification

2

Class 0

Die Bonding

Die attach for these devices is made simple

through the use of surface mount die attach tech-

nology. Mounting pads are conveniently located on

the bottom surface of these devices, and are oppo-

site the active junction. The devices are well suited

for high temperature solder attachment onto hard

substrates. 80Au/20Sn and Sn63/Pb37 solders are

acceptable for usage. Die attach with Electrically

Conductive Silver Epoxy is Not Recommended.

For Hard substrates, we recommend utilizing a

vacuum tip and force of 60 to 100 grams applied

uniformly to the top surface of the device, using a

hot gas bonder with equal heat applied across the

bottom mounting pads of the device. When solder-

ing to soft substrates, it is recommended to use a

lead-tin interface at the circuit board mounting

pads. Position the die so that its mounting pads

are aligned with the circuit board mounting pads.

Reflow the solder paste by applying equal heat to

the circuit at both die-mounting pads. The solder

joint must Not be made one at a time, creating un-

equal heat flow and thermal stress. Solder reflow

should Not be performed by causing heat to flow

through the top surface of the die. Since the HMIC

glass is transparent, the edges of the mounting

pads can be visually inspected through the die after

die attach is completed.

2. Human Body Model