1

Barrier Silicon Schottky Diodes

M/A-COM Products

Rev. V9

MA4E2502 Series

•

North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

•

India Tel: +91.80.43537383

•

China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

• Extremely Low Parasitic Capacitance and In-

ductance

• Surface Mountable in Microwavable Circuits, No

Wirebonds Required

• Rugged HMIC Construction with Polyimide

Scratch Protection

• Reliable, Multilayer Metalization with a Diffusion

Barrier, 100% Stabilization Bake (300°C, 16

hours)

• Lower Susceptibility to ESD Damage

• RoHS Compliant

Description and Applications

The MA4E2502 SURMOUNT

Silicon Low, Medium, and High Barrier Schottky

Devices fabricated with the patented Heterolithic

Microwave Integrated Circuit (HMIC) process.

HMIC circuits consist of Silicon pedestals which

form diodes or via conductors embedded in a glass

dielectric, which acts as the low dispersion, micro-

strip transmission medium.

The combination of

silicon and glass allows HMIC devices to have ex-

cellent loss and power dissipation characteristics in

a low profile, reliable device.

The Surmount Schottky devices are excellent

choices for circuits requiring the small parasitics of

a beam lead device coupled with the superior me-

chanical performance of a chip.

The Surmount

structure employs very low resistance silicon vias

to connect the Schottky contacts to the metalized

mounting pads on the bottom surface of the chip.

These devices are reliable, repeatable, and a lower

cost performance solution to conventional devices.

They have lower susceptibility to electrostatic dis-

charge than conventional beam lead Schottky di-

odes.

The multilayer metallization employed in the fabri-

cation of the Surmount Schottky junctions includes

a platinum diffusion barrier, which permits all de-

vices to be subjected to a 16-hour non-operating

stabilization bake at 300°C.

The “0502” outline allows for Surface Mount place-

ment and multi-functional polarity orientations.

The MA4E2502 Family of Surmount Schottky di-

odes are recommended for use in microwave cir-

cuits through Ku band frequencies for lower power

applications such as mixers, sub-harmonic mixers,

detectors, and limiters.

The HMIC construction

facilitates the direct replacement of more fragile

beam lead diodes with the corresponding Sur-

mount diode, which can be connected to a hard or

soft substrate circuit with solder.

Case Style 1246

DIM

INCHES

MIN.

MAX.

MIN.

MAX.

A

0.0445

0.0465

1.130

1.180

B

0.0169

0.0189

0.430

0.480

C

0.0040

0.0080

0.102

0.203

D Sq.

0.0128

0.0148

0.325

0.375

E

0.0128

0.0148

0.325

0.375

MILLIMETERS