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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L151C6U6 датащи(PDF) 86 Page - STMicroelectronics |
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STM8L151C6U6 датащи(HTML) 86 Page - STMicroelectronics |
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86 / 122 page  Electrical parameters STM8L151xx, STM8L152xx 86/122 Doc ID 15962 Rev 5 Figure 21. Typical VIL and VIH vs VDD (standard I/Os) Figure 22. Typical VIL and VIH vs VDD (true open drain I/Os) 2. Data based on characterization results, not tested in production. 3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 4. The max. value may be exceeded if negative current is injected on adjacent pins. 5. Not tested in production. 6. RPU pull-up equivalent resistor based on a resistive transistor(corresponding IPU current characteristics described in Figure 24). 7. Data guaranteed by Design, not tested in production. |
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