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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L151C6U6 датащи(PDF) 83 Page - STMicroelectronics |
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STM8L151C6U6 датащи(HTML) 83 Page - STMicroelectronics |
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83 / 122 page  STM8L151xx, STM8L152xx Electrical parameters Doc ID 15962 Rev 5 83/122 Low speed internal RC oscillator (LSI) Figure 20. Typical LSI frequency vs. VDD Table 33. LSI oscillator characteristics Symbol Parameter (1) 1. VDD = 1.8 V to 3.0 V, TA = -40 to 125 °C unless otherwise specified. Conditions(1) Min Typ Max Unit fLSI Frequency 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time 200(2) 2. Data based on characterization results, not tested in production. µs IDD(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤TA ≤ 85 °C -10 4 % |
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