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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L151C6U6 датащи(PDF) 70 Page - STMicroelectronics |
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STM8L151C6U6 датащи(HTML) 70 Page - STMicroelectronics |
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70 / 122 page  Electrical parameters STM8L151xx, STM8L152xx 70/122 Doc ID 15962 Rev 5 Figure 14. Typ. IDD(Wait) vs. VDD,fCPU =16MHz 1) 1. Typical current consumption measured with code executed from Flash 1. Based on characterization results, unless specified 2. All peripherals OFF, VDD from 1.65 V to 3.6 V, HSI internal RC osc. , fCPU = fSYSCLK 3. For temperature range 6. 4. For temperature range 3. 5. Flash is configured in IDDQ mode in Wait mode by setting the EPM or WAITM bit in the Flash_CR1 register. 6. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 30. 7. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption (IDD HSE) must be added. Refer to Table 31 |
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