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STD100N3LF3 датащи(PDF) 5 Page - STMicroelectronics

номер детали STD100N3LF3
подробное описание детали  N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET??II Power MOSFET
PDF  14 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STD100N3LF3 датащи(HTML) 5 Page - STMicroelectronics

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STD100N3LF3
Electrical characteristics
Doc ID 13206 Rev 3
5/14
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD= 15 V, ID= 40 A,
RG=4.7Ω, VGS=10 V
Figure 15 on page 9
-
9
205
31
35
-
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
-
80
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
320
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD = 40 A, VGS = 0
-
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 25 V, TJ = 150 °C
Figure 17 on page 9
-
40
40
2
ns
µC
A



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