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STD100N3LF3 датащи(PDF) 3 Page - STMicroelectronics

номер детали STD100N3LF3
подробное описание детали  N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET??II Power MOSFET
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STD100N3LF3 датащи(HTML) 3 Page - STMicroelectronics

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STD100N3LF3
Electrical ratings
Doc ID 13206 Rev 3
3/14
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
Current limited by package.
Drain current (continuous) at TC = 25 °C
80
A
ID
Drain current (continuous) at TC=100 °C
70
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25 °C
110
W
Derating factor
0.73
W/°C
dv/dt (3)
3.
ISD ≤80A, di/dt ≤360 A/µs, VDS ≤V(BR)DSS, TJ ≤TJMAX
Peak diode recovery voltage slope
3.9
V/ns
Tstg
Storage temperature
-55 to 175
°C
TJ
Max. operating junction temperature
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case max
1.36
°C/W
RthJA
Thermal resistance junction-ambient max
100
°C/W
Tl
Maximum lead temperature for soldering
purpose
275
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Not-repetitive avalanche current
(pulse width limited by TJ max)
40
A
EAS
Single pulsed avalanche energy
(starting TJ = 25 °C, ID = IAV, VDD = 24 V)
500
mJ



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