STD100N3LF3 datasheet(4/14 Pages) STMICROELECTRONICS

номер детали	STD100N3LF3

подробное описание детали	N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET??II Power MOSFET

PDF	14 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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4 / 14 page

Electrical characteristics

STD100N3LF3

4/14

Doc ID 13206 Rev 3

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±200

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 40 A

VGS = 5 V, ID = 20 A

0.0045

0.008

0.0055

0.01

Ω

VGS = 10 V,

ID = 40 A @125 °C

VGS = 5 V,

ID = 20 A @125 °C

0.0068

0.0146

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 10 V, ID = 15 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

2060

728

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 24 V, ID = 80 A

VGS = 5 V

Figure 16 on page 9

7.5

Gate input resistance

f = 1 MHz gate DC Bias = 0

test signal level = 20 mV

open drain

-1.9

Ω

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