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MRF9085LSR3 датащи(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF9085LSR3 датащи(HTML) 2 Page - Freescale Semiconductor, Inc |
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2 / 12 page ![]() 4-2 Freescale Semiconductor RF Product Device Data MRF9085LR3 MRF9085LSR3 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model MRF9085LR3 MRF9085LSR3 M2 (Minimum) M1 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) VGS(th) 2.0 — 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) — 3.7 — Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs — 8.0 — S Dynamic Characteristics (1) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 73 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.9 — pF 1. Part is internally input matched. (continued) |
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