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MRF9085LSR3 датащи(PDF) 6 Page - Freescale Semiconductor, Inc

номер детали MRF9085LSR3
подробное описание детали  RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
PDF  12 Pages
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производитель  FREESCALE [Freescale Semiconductor, Inc]
домашняя страница  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF9085LSR3 датащи(HTML) 6 Page - Freescale Semiconductor, Inc

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Freescale Semiconductor
RF Product Device Data
MRF9085LR3 MRF9085LSR3
TYPICAL CHARACTERISTICS
−80
−40
−60
−20
20
0
40
IMD
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
860
18
Figure 3. Class AB Broadband Circuit Performance
14
11
Pout, OUTPUT POWER (WATTS) PEP
19
7
Figure 4. Power Gain, Efficiency, IMD versus
Output Power
1
9
1
−70
Figure 5. Intermodulation Distortion Products
versus Output Power
100
10
−10
−30
−60
−50
−40
11
13
15
13
12
VDD = 26 Vdc
Pout = 90 W (PEP)
IDQ = 700 mA
Two−Tone, 100 kHz Tone Spacing
865
17
15
17
10
100
16
870
875
880
885
890
895
900
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) CW AVG.
18
12
Figure 6. Power Gain, Efficiency versus Output
Power
1
13
10
7
Figure 7. Power Gain, Efficiency, ACPR versus
Output Power
1
19
15
11
9
13
17
14
15
16
17
10
100
−20
60
50
40
30
20
10
0
−36
−34
−32
−30
−28
35
40
45
50
1.00
1.25
1.50
1.75
2.00
Gps
h
VSWR
−40
−60
−20
20
0
40
60
VDD = 26 Vdc
IDQ = 700 mA
f1 = 880.0 MHz
f2 = 880.1 MHz
Gps
h
IMD
VDD = 26 Vdc
IDQ = 700 mA
f1 = 800.0 MHz
f2 = 800.1 MHz
3rd Order
5th Order
7th Order
Gps
h
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
Single Tone
Gps
h
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
750 kHz
1.98 MHz
19



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