MRF9085LR3 MRF9085LSR3

4-3

Freescale Semiconductor

RF Product Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system)

Two-Tone Common-Source Amplifier Power Gain

f1 = 880.0 MHz, f2 = 880.1 MHz)

17

17.9

—

dB

Two-Tone Drain Efficiency

f1 = 880.0 MHz, f2 = 880.1 MHz)

η

36

40

—

%

3rd Order Intermodulation Distortion

f1 = 880.0 MHz, f2 = 880.1 MHz)

IMD

—

-31

-28

dBc

Input Return Loss

f1 = 880.0 MHz, f2 = 880.1 MHz)

IRL

—

-21

-9

dB

Two-Tone Common-Source Amplifier Power Gain

f1 = 865.0 MHz, f2 = 865.1 MHz)

—

17.9

—

dB

Two-Tone Drain Efficiency

f1 = 865.0 MHz, f2 = 865.1 MHz)

η

—

40.0

—

%

3rd Order Intermodulation Distortion

f1 = 865.0 MHz, f2 = 865.1 MHz)

IMD

—

-31

—

dBc

Input Return Loss

f1 = 865.0 MHz, f2 = 865.1 MHz)

IRL

—

-16

—

dB

Power Output, 1 dB Compression Point, CW

f1 = 880.0 MHz)

—

105

—

W

Common-Source Amplifier Power Gain

f1 = 880.0 MHz)

—

17.5

—

dB

Drain Efficiency

f1 = 880.0 MHz)

η

—

51

—

%

f1 = 960 MHz)

—

105

—

W

1. These values are derived from a 960 MHz optimized test fixture. Values are not applicable to Figures 1 and 2.