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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F101X8 датащи(PDF) 50 Page - STMicroelectronics |
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STM32F101X8 датащи(HTML) 50 Page - STMicroelectronics |
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50 / 85 page  Electrical characteristics STM32F101x8, STM32F101xB 50/85 Doc ID 13586 Rev 13 Table 28. Flash memory endurance and data retention 5.3.10 EMC characteristics Susceptibility tests are performed on a sample basis during device characterization. Functional EMS (Electromagnetic susceptibility) While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs: ● Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard. ● FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard. A device reset allows normal operations to be resumed. The test results are given in Table 29. They are based on the EMS levels and classes defined in application note AN1709. IDD Supply current Read mode fHCLK = 36 MHz with 1 wait state, VDD = 3.3 V 20 mA Write / Erase modes fHCLK = 36 MHz, VDD = 3.3 V 5mA Power-down mode / Halt, VDD = 3.0 to 3.6 V 50 µA Vprog Programming voltage 2 3.6 V 1. Guaranteed by design, not tested in production. Symbol Parameter Conditions Value Unit Min(1) 1. Based on characterization not tested in production. Typ Max NEND Endurance TA = –40 °C to 85 °C 10 kcycles tRET Data retention TA = 85 °C, 1 kcycle (2) 2. Cycling performed over the whole temperature range. 30 Years TA = 55 °C, 10 kcycle (2) 20 Table 27. Flash memory characteristics (continued) Symbol Parameter Conditions Min(1) Typ Max(1) Unit |
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