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ST7LNB1Y0 датащи(PDF) 28 Page - STMicroelectronics |
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ST7LNB1Y0 датащи(HTML) 28 Page - STMicroelectronics |
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28 / 36 page ![]() Electrical characteristics ST7LNB1Y0 28/36 5.6 I/O port pin characteristics 5.6.1 General characteristics Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified. Figure 12. Two typical applications with unused I/O pin 1. Only external pull-up allowed on ICCCLK pin. Table 29. General characteristics Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage 0.3VDD V VIH Input high level voltage 0.7VDD Vhys Schmitt trigger voltage hysteresis(1) 1. Data based on characterization results, not tested in production. 400 mV IL Input leakage current VSS≤VIN≤VDD ±1 µA IS Static current consumption(2) 2. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or an external pull-up or pull-down resistor (see Figure 12). Data based on design simulation and/or technology characteristics, not tested in production. Floating input mode 200 RPU Weak pull-up equivalent resistor(3) 3. The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics described in Figure 13). VIN=VSS, VDD=5 V 50 120 250 k Ω CIO I/O pin capacitance 5 pF tf(IO)out Output high to low level fall time(1) CL=50 pF Between 10% and 90% 25 ns tr(IO)out Output low to high level rise time(1) 25 10 k Ω UNUSED I/O PORT ST7XXX 10 k Ω UNUSED I/O PORT ST7XXX VDD |
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