DMS3015SSS

Document number: DS32096 Rev. 4 - 2

3 of 6

www.diodes.com

September 2010

© Diodes Incorporated

DMS3015SSS

0

5

10

15

20

25

30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , D RAIN -SOURCE CURRENT (A)

D

0

0.002

0.004

0.006

0.008

0.010

0.012

0.014

0.016

0.018

0.020

V

= 4.5V

GS

V

= 10V

GS

0

0.002

0.004

0.006

0.008

0.010

0.012

0.014

0.016

0.018

0.020

0

5

10

15

20

25

30

I , DRAIN CU RREN T (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

V= 4.5V

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0.5

0.7

0.9

1.1

1.3

1.5

1.7

Fig. 5 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATU RE (°C)

J

V

= 10V

I

= 10A

GS

D

V

= 4.5V

I

= 5A

GS

D

0

0.002

0.004

0.006

0.008

0.010

0.012

0.014

0.016

0.018

0.020

Fig. 6 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATUR E (°C)

J

V

= 10V

I

= 10A

GS

D

V

= 4.5V

I

= 5A

GS

D

0.5

1.0

1.5

2.0

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125

T , AMBIENT TEMPERATU RE (°C)

A

I

= 1mA

D

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. C urrent

0

5

10

15

20

25

30

T = 25°C

A