DMS3015SSS

Document number: DS32096 Rev. 4 - 2

2 of 6

www.diodes.com

September 2010

© Diodes Incorporated

DMS3015SSS

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

0.1

mA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

1.0

1.5

2.5

V

Static Drain-Source On-Resistance

-

-

8.5

9.5

11.9

14.9

mΩ

Forward Transfer Admittance

-

18

-

S

Diode Forward Voltage

-

0.45

0.55

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

-

1276

-

pF

f = 1.0MHz

Output Capacitance

-

160

-

pF

Reverse Transfer Capacitance

-

136

-

pF

Gate Resistance

0.3

1.48

2.7

Ω

-

14.3

-

nC

-

30.6

-

nC

Gate-Source Charge

-

3.4

-

nC

Gate-Drain Charge

-

4.3

-

nC

Turn-On Delay Time

-

15.8

-

ns

Turn-On Rise Time

-

27.8

-

ns

Turn-Off Delay Time

-

29.7

-

ns

Turn-Off Fall Time

-

13.6

-

ns

Notes:

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

0

0.5

1.0

1.5

2.0

Fig. 1 Typical Output C haracteristics

V

, DRAIN -SOURCE VOLTAGE (V)

DS

0

5

10

15

30

20

25

V

= 2.0V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 3.5V

GS

V

= 4. 0V

GS

V

= 4. 5V

GS

0

5

10

15

20

25

30

01

2

3

4

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

V

= 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A