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NTLJS2103P датащи(PDF) 4 Page - ON Semiconductor

номер детали NTLJS2103P
подробное описание детали  Power MOSFET
PDF  6 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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NTLJS2103P датащи(HTML) 4 Page - ON Semiconductor

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
SINGLE PULSE TIME (s)
QG, TOTAL GATE CHARGE (nC)
VDS = −9.6 V
ID = −5.9 A
TJ = 25°C
-VGS
QGS
QGD
QT
-VDS
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
VGS = 0 V
TJ = 25°C
TJ = 150°C
Figure 11. Threshold Voltage
TJ, JUNCTION TEMPERATURE (°C)
ID = −250 mA
Figure 12. Single Pulse Maximum Power
Dissipation
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VGS = 0 V
TJ = 25°C
f = 1 MHz
Coss
Ciss
Crss
RG, GATE RESISTANCE (OHMS)
tr
td(off)
td(on)
tf
VGS = −4.5 V
VDD = −8.0 V
ID = −5.9 A
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