NTLJS2103P datasheet(1/6 Pages) ONSEMI

номер детали	NTLJS2103P

подробное описание детали	Power MOSFET

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производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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July, 2009 − Rev. 2

1

Publication Order Number:

NTLJS2103P/D

NTLJS2103P

Power MOSFET

−12 V, −7.7 A, mCoolt Single P−Channel,

2x2 mm, WDFN Package

Features

• WDFN Package Provides Exposed Drain Pad for Excellent Thermal

Conduction

• 2x2 mm Footprint Same as SC−88 Package

• Lowest RDS(on) Solution in 2x2 mm Package

• 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate

Drive

• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

• This is a Pb−Free Device

Applications

• High Side Load Switch

• DC−DC Converters (Buck and Boost Circuits)

• Optimized for Battery and Load Management Applications in

Portable Equipment

• Li−Ion Battery Linear Mode Charging

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−12

V

Gate−to−Source Voltage

VGS

±8.0

V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25°C

ID

−5.9

A

TA = 85°C

−4.2

t ≤ 5 s

TA = 25°C

−7.7

Power Dissipation

(Note 1)

Steady

State

TA = 25°C

PD

1.9

W

t ≤ 5 s

3.3

Continuous Drain

Current (Note 2)

Steady

State

TA = 25°C

ID

−3.5

A

TA = 85°C

−2.5

Power Dissipation

(Note 2)

TA = 25°C

PD

0.7

W

Pulsed Drain Current

tp = 10 ms

IDM

−24

A

Operating Junction and Storage Temperature

TJ, TSTG

−55 to

150

°C

Source Current (Body Diode) (Note 2)

IS

−2.7

A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size,

(30 mm2, 2 oz Cu).

http://onsemi.com

−12 V

45 mW @ −1.8 V

25 mW @ −4.5 V

RDS(on) TYP

−5.9 A

ID MAX (Note 1)

V(BR)DSS

60 mW @ −1.5 V

G

S

P−CHANNEL MOSFET

D

J7 = Specific Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

J7MG

G

1

2

3

6

5

4

WDFN6

CASE 506AP

MARKING

DIAGRAM

Device

Package

Shipping†

ORDERING INFORMATION

NTLJS2103PTAG

WDFN6

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1

2

3

6

5

4

D

G

D

S

(Top View)

PIN CONNECTIONS

D

S

D

Pin 1

35 mW @ −2.5 V

−5.3 A

−2.0 A

−1.0 A

NTLJS2103PTBG

WDFN6

(Pb−Free)

3000/Tape & Reel

95 mW @ −1.2 V

−0.2 A

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ON Semiconductor	NTLJS2103P	135Kb / 6P	Power MOSFET March, 2011 ??Rev. 3
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