NTLJS2103P datasheet(2/6 Pages) ONSEMI

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NTLJS2103P

http://onsemi.com

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State (Note 3)

RqJA

°C/W

Junction−to−Ambient – t ≤ 5 s (Note 3)

RqJA

Junction−to−Ambient – Steady State Min Pad (Note 4)

RqJA

180

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu).

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−12

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = −250 mA, Ref to 25°C

−8.0

mV/°C

Zero Gate Voltage Drain Current

IDSS

VDS = −12 V, VGS = 0 V

TJ = 25°C

−1.0

TJ = 85°C

−5.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±8.0 V

±0.1

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.3

−0.8

Negative Gate Threshold

Temperature Coefficient

VGS(TH)/TJ

2.6

mV/°C

Drain−to−Source On−Resistance

RDS(on)

VGS = −4.5, ID = −5.9 A

VGS = −4.5, ID = −3.0 A

VGS = −2.5, ID = −5.3 A

VGS = −2.5, ID = −3.0 A

VGS = −1.8, ID = −2.0 A

VGS = −1.5, ID = −1.0 A

100

VGS = −1.2, ID = −200 mA

400

Forward Transconductance

gFS

VDS = −6.0 V, ID = −2.0 A

8.8

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −6.0 V

1157

Output Capacitance

COSS

300

Reverse Transfer Capacitance

CRSS

200

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −9.6 V,

ID = −5.9 A

12.8

Threshold Gate Charge

QG(TH)

0.4

Gate−to−Source Charge

QGS

1.6

Gate−to−Drain Charge

QGD

3.6

Gate Resistance

15.7

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(ON)

VGS = −4.5 V, VDD = −8.0 V,

ID = −5.9 A, RG = 2.0 W

8.0

Rise Time

Turn−Off Delay Time

td(OFF)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Recovery Voltage

VSD

VGS = 0 V, IS = −1.0 A

TJ = 25°C

0.62

1.0

TJ = 85°C

0.56

Reverse Recovery Time

tRR

VGS = 0 V, dISD/dt = 100 A/ms,

IS = −1.0 A

Charge Time

Discharge Time

Reverse Recovery Time

QRR

5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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