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ZXMS6005DT8 датащи(PDF) 4 Page - Diodes Incorporated |
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ZXMS6005DT8 датащи(HTML) 4 Page - Diodes Incorporated |
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4 / 9 page ![]() ZXMS6005DT8 Document Number DS32248 Rev. 1 - 2 4 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated RECOMMENDED OPERATING CONDITIONS The ZXMS6005DT8 is optimised for use with µC operating from 3.3V and 5V supplies. Symbol Description Min Max Units VIN Input voltage range 0 5.5 V TA Ambient temperature range -40 125 °C VIH High level input voltage for MOSFET to be on 3 5.5 V VIL Low level input voltage for MOSFET to be off 0 0.7 V VP Peripheral supply voltage (voltage to which load is referred) 0 24 V CHARACTERISTICS 110 10m 100m 1 10 Limited by Over-Current Protection Single Pulse T amb =25°C See Note (a)(d) Limited by R DS(on) 1ms 10ms 100ms 1s DC Safe Operating Area V DS Drain-Source Voltage (V) Limit of s/c protection 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 active die Derating Curve Temperature (°C) 2 active die 100µ 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 T amb =25°C See Note (a)(d) Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 1 10 100 Single Pulse T amb =25°C See Note (a)(d) Pulse Power Dissipation Pulse Width (s) |
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